TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

Anil VOHRA, Professor (Full), M.Sc., Ph.D

CGG vs VGS curve of Si for SiO2 + HfO2 as gate oxide with metal

Photo-generation Rate generated in the model.

Effect of 3 nm gate length scaling in junctionless double

TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

IG vs VGS curves with Ta and W as metal gates for In0.53Ga0.47As

Energy band alignment with SiO2 + HfO2 as gate dielectric material

Anil VOHRA, Professor (Full), M.Sc., Ph.D

ION/IOFF ratio comparison of this work with reports in literature

Energy band alignment with SiO2 + HfO2 as gate dielectric material

TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

Effect of 3 nm gate length scaling in junctionless double

Anil VOHRA, Professor (Full), M.Sc., Ph.D

TM DSG SiNT MOSFET with a inner gate and outer gate are shown with