Obtaining Uniform Dopant Distributions in VLS-Grown Si Nanowires

Doping of semiconductor nanowires Journal of Materials Research

Growth of epitaxial silicon nanowires on a Si substrate by a metal

Growth of nanowire heterostructures and their optoelectronic and spintronic applications - ScienceDirect

Growth mechanism of metal-oxide nanowires synthesized by electron

a) Schematic illustration of the measured device after four etching

PDF] Spatially resolved correlation of active and total doping

Nanomaterials, Free Full-Text

PDF) Revealing the Dopant Incorporation Mechanisms into Vapor

Crystals, Free Full-Text

Energies, Free Full-Text

Growth of epitaxial silicon nanowires on a Si substrate by a metal

Effect of precursor partial pressure and growth temperature on the

Direct measurement of dopant distribution in an individual vapour

Doping of semiconductor nanowires Journal of Materials Research